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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Interlayer coupling dependent magnetic properties in amorphous and nanocrystalline FeTaC based multilayer thin films
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Interlayer coupling dependent magnetic properties in amorphous and nanocrystalline FeTaC based multilayer thin films

机译:非晶和纳米晶FeTaC基多层薄膜中依赖于层间耦合的磁性

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摘要

We report systematic studies on the effects of heat treatment, the number of multilayers and temperature on interlayer coupling dependent magnetic properties in amorphous and nanocrystalline ([FeTaC(y nm)/Ta(1 nm)](n=1-4)/FeTaC(y nm)/substrate) multilayer structured thin films fabricated directly on thermally oxidized Si substrate at ambient temperature and post annealed at different elevated temperatures (T-A). As-deposited films and the films annealed at 200 degrees C exhibit an amorphous structure. With an increase in TA. 300 degrees C, the nucleation of fine nanocrystals in a residual amorphous matrix appears and a fraction of such nanocrystals increases with increasing T-A. The changes in the microstructure modify the interlayer coupling between FeTaC ferromagnetic layers due to the release of stress accumulated during film deposition and enhanced interface roughness with increasing TA. As a result, a change in the shape of the magnetic hysteresis (M-H) loop and multistep magnetization reversal process, where the number of steps in the M-H loop, their nature and positions strongly depend on the number of multilayers, T-A and temperature, were observed. As-deposited films and the films annealed at 200 degrees C exhibit multistep magnetization reversal behavior only at temperatures below 80 K, but the films annealed above 200 degrees C show such multistep reversal behavior even at 300 K. This causes an unusual variation of temperature-dependent coercivity in these multilayer films having different microstructures. Furthermore, the coercivity due to individual or collective switching between FeTaC layers in these films varies unusually and is substantially influenced by the bottom FeTaC layer grown directly on the substrate. The observed results were discussed on the basis of variation in interlayer coupling with the multilayer structure, post annealing conditions and temperature. This provided evidence of controlling the soft magnetic properties and comprehensive study on the multistep magnetization reversal behavior in multilayer structured FeTaC based thin films.
机译:我们报告系统研究的影响,热处理,多层数和温度对非晶和纳米晶体([FeTaC(y nm)/ Ta(1 nm)](n = 1-4)/ FeTaC中层间耦合相关的磁性的影响(y nm)/基板)在室温下直接在热氧化的Si基板上制造并在不同的高温(TA)下进行后退火的多层结构薄膜。所沉积的膜和在200℃下退火的膜表现出非晶结构。随着TA的增加。在300℃下,在残余的无定形基质中出现细纳米晶体的成核,并且这种纳米晶体的分数随着T-A的增加而增加。微观结构的变化改变了FeTaC铁磁层之间的层间耦合,这是由于膜沉积过程中积累的应力的释放以及随TA的增加而增加的界面粗糙度。结果,磁滞(MH)回路的形状发生了变化,并且进行了多步磁化反转过程,其中MH回路中的步数,其性质和位置很大程度上取决于多层数,TA和温度。观测到的。沉积的薄膜和在200摄氏度下退火的薄膜仅在低于80 K的温度下才显示多步磁化反转行为,但在200摄氏度以上的退火下的薄膜甚至在300 K时也表现出这种多步反转行为。这些具有不同微观结构的多层膜中的矫顽力取决于磁导率。此外,由于在这些膜中的FeTaC层之间的单独或集体切换而导致的矫顽力异常地变化,并且基本上受直接在基板上生长的底部FeTaC层的影响。基于与多层结构的层间耦合,后退火条件和温度的变化讨论了观察到的结果。这提供了控制软磁性能的证据,并且对多层结构的FeTaC基薄膜的多步磁化反转行为进行了综合研究。

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