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Biexciton formation induced by bright-dark exciton transitions in a diluted magnetic semiconductor asymmetric quantum well

机译:稀磁半导体非对称量子阱中由明暗激子跃迁引起的双激子形成

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We have investigated excitonic states in a (Cd,Mg)Te/CdTe/(Cd,Mn)Te asymmetric quantum well, during the photoluminescence decay processes. The intensity ratio of biexciton to exciton showed almost a linear dependence. The biexciton luminescence showed a longer decay time when compared with that of the exciton. The rate equations based on our model taking account of the dark exciton level (J = +/- 2) were used to analyze this anomalous exciton-biexciton system. Our analysis leads to a conclusion that the new channel from a dark exciton has an essential role when biexcitons are created in II-VI diluted magnetic semiconductor quantum wells. (c) 2004 Elsevier B.V. All rights reserved.
机译:我们已经研究了(Cd,Mg)Te / CdTe /(Cd,Mn)Te不对称量子阱在光致发光衰减过程中的激子态。双激子与激子的强度比几乎呈线性关系。与激子相比,双激子发光显示出更长的衰减时间。基于我们模型的速率方程,考虑了暗激子水平(J = +/- 2),被用于分析这种异常激子-比西森系统。我们的分析得出的结论是,当在II-VI稀释的磁半导体量子阱中创建双激子时,来自暗激子的新通道具有至关重要的作用。 (c)2004 Elsevier B.V.保留所有权利。

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