Luminescence properties of impurity-doped semiconductor nanoparticles

摘要

Luminescence properties of impurity-doped Ⅱ-Ⅵ compound semiconductor nanoparticles are reviewed. Impurity-doped semiconductor nanoparticles have been prepared by different methods, and their single-particle luminescence properties have been studied. The shallow impurity luminescence shows very narrow line width, while the deep impurity luminescence shows a broad spectral band even in a single nanoparticle. The fabrication and luminescence processes of impurity-doped nanoparticles are discussed.