The growth and properties of ZnO film on Si(111) substrate with an AlN buffer by AP-MOCVD

摘要

A thin AlN buffer layer was used to grow ZnO thin film on Si(111) substrate by atmospheric pressure MOCVD to protect the substrate from being oxidized and to eliminate the mismatch between the epilayer and the substrate. Double crystal X-ray diffraction results indicate that high-crystallinity ZnO film has been obtained. The full-width of half-maximum (FWHM) of ZnO (0002) and ZnO (1012) co-rocking curve peaks are 460″ and 1105″, respectively. The crack density Of ZnO surface is 20 strip/cm by optical microscope graph determination. In situ laser reflectance trace shows that a quasi-two-dimension growth mode was obtained when the film growth rate is up to 4.3 μm/h. Free exciton emission and bound exciton emission accompanied by their longitudinal optical phonon replicas can be observed from the photoluminescence spectrum at 10K.