The growth and properties of ZnO film on Si(1 1 1) substrate with an an AlN buffer by AP-MOCVD

摘要

A thin A1N buffer layer was used to grow ZnO thin film on Si(1 1 1) substrate by atmospheric pressure MOCVD to protect the substrate from being oxidized and to eliminate the mismatch between the epilayer and the substrate. Double crystal X-ray diffraction results indicate that high-crystallinity ZnO film has been obtained. The full-width of half-maximum (FWHM) of ZnO (0 0 0 2) and ZnO (1 0 1 2) ω-rocking curve peaks are 460" and 1105", respectively. The crack density Of ZnO surface is 20 strip/cm by optical microscope graph determination. In situ laser reflectance trace shows that a quasi-two-dimension growth mode was obtained when the film growth rate is up to 4.3 μm/h. Free exciton emission and bound exciton emission accompanied by their longitudinal optical phonon replicas can be observed from the photoluminescence spectrum at 10 K.