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首页> 外文期刊>日本金属学会誌 >すずおよびすず一鉛めっき皮膜におけるウィスカ発生·抑制機構
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すずおよびすず一鉛めっき皮膜におけるウィスカ発生·抑制機構

机译:锡和锡铅镀层中晶须生成和抑制的机理

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摘要

電子回路の実装に用いられる接続用端子には,すず系めっrnきが施されているが,めっき皮膜から発生する針状結晶(ワrnイスカ)は,端子間の短絡を招き,実装の高密度化に伴っrnて,その問題が深刻化している.%Generation and growth of whiskers and nodules from electroplated tin and tin-lead films on copper or nickel substrate were studied by scanning electron microscopy and X-ray diffraction. In the case of copper substrate, whiskers generated in 0.3 Ms on the electroplated tin film whose thickness was 1 μm. On the other hand, electroplated tin-lead film on copper substrate showed only nodules even after 13 Ms. Residual stress of electroplated tin film (1 μm) and the number of whiskers increased with the amount of copper-tin intermetallic compounds (Cu_6Sn_5) which developed between the plated film and the substrate of copper. Although residual stress and the amount of Cu_6Sn_5 also increased in the tin-lead system, the morphology of the layer of Cu_6Sn_5 was more uniform compared with the case of tin electroplated film on copper substrate. When the electroplated tin-lead film was subjected to the compression testing by a ball of zirconium oxide (1 mm-diameter, 2.94 N-0.605 Ms), the edge of the indentation did not show any whiskers but diffusion of lead was observed from right under the zirconium oxide ball to the fringe, as well as Os-twald growth of lead. In the case of electroplated tin film on nickel substrate, whose residual stress was weakly tensional, nickel-tin intermetallic compounds (Ni_3Sn, Ni_3Sn_2, Ni_3Sn_4) uniformly developed immediately after electroplating, and no whiskers were observed even after the compression testing. While growth of whiskers is considered to be due to diffusion of tin atoms induced by inhomogeneous strain field in the electroplated film, lead atoms in tin-lead system is considered to diffuse rapidly toward the free surface to release residual stress and to generate many nodules.
机译:用于安装电子电路的连接端子镀锡,但是从镀膜产生的针状晶体(警告晶体)会导致端子之间的短路,从而导致安装失败。随着密度的增加,问题变得更加严重。通过扫描电子显微镜和X射线衍射研究了在铜或镍基板上电镀锡和锡铅膜上晶须和结节的生成和生长;在铜基板的情况下,在电镀锡膜上以0.3 Ms的速度产生晶须厚度为1μm的铜衬底上的电镀锡铅膜即使在13 Ms之后也仅显示结节。电镀锡膜的残余应力(1μm)和晶须的数量随铜锡量的增加而增加在镀膜和铜基体之间会形成金属间化合物(Cu_6Sn_5)。尽管残余应力和Cu_6Sn_5的含量在锡铅体系中也有所增加,但与锡相比,Cu_6Sn_5层的形貌更加均匀当用氧化锆球(直径1 mm,2.94 N-0.605 Ms)对电镀的锡铅膜进行压缩测试时,其边缘压痕没有显示任何晶须,但观察到铅从氧化锆球的正下方向边缘扩散,以及铅的Os-twald生长。在镍基底上电镀锡膜的情况下,其残余应力微弱电镀后立即产生均匀拉伸的镍锡金属间化合物(Ni_3Sn,Ni_3Sn_2,Ni_3Sn_4),甚至在压缩试验后也未观察到晶须,而晶须的生长被认为是由于不均匀应变场引起的锡原子的扩散在电镀膜中,锡铅系统中的铅原子被认为会迅速向自由表面扩散,以释放残余应力并产生许多结核。

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