机译:晶界的结晶质量对电镀铜薄膜互连的机械和电气性能的影响
Department of Nanomechanics, Graduate School of Engineering, Tohoku University, 6-6-11-716, Aoba Aramaki, Aobaku, Sendai, Miyagi 980-8579, Japan;
Department of Nanomechanics, Graduate School of Engineering, Tohoku University, 6-6-11-716, Aoba Aramaki, Aobaku, Sendai, Miyagi 980-8579, Japan;
Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University, 6-6-11-716, Aoba Aramaki, Aobaku, Sendai, Miyagi 980-8579, Japan;
Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University, 6-6-11-716, Aoba Aramaki, Aobaku, Sendai, Miyagi 980-8579, Japan;
Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University, 6-6-11-716, Aoba Aramaki, Aobaku, Sendai, Miyagi 980-8579, Japan;
机译:硅通孔电镀铜薄膜互连的晶体学质量的提高
机译:三维电子模块用电镀铜薄膜力学性能的波动机理
机译:纳米晶TiN的晶体取向对TiN / NiTi薄膜结构,电学和力学性能的影响
机译:晶界的结晶学质量对电镀铜薄膜互连的力学和电学性能的影响
机译:研究晶界,膜界面和晶体学取向对掺杂g的二氧化铈薄膜离子电导率的影响。
机译:KF沉积后处理对Cu(InGa)Se2薄膜晶界性能的影响
机译:锡凸块和电镀铜薄膜在接合结构的机械和电学两者之间形成金属间化合物的影响
机译:晶界对多晶硅薄膜电性能的影响。进展报告,1980-1981