Effects of GaAs-Spacer Strain on Vertical Ordering of Stacked InAs Quantum Dots in a GaAs Matrix

摘要

Vertical ordering in stacked layers of Inds/GaAs quantum dots is currently the focus of scientific research because of its potential for optoelectronics applica- tions. Transmission electron microscopy was applied to study InAs/GaAs stacked layers grown by molecular-beam-epitaxy with various thicknesses of GaAs spacer. Thickness dependencies of quantum dot size and their ordering were observed experimentally and, then, compared with the results of strain calcula- tions based on the finite element method. The vertical ordering did occur when the thickness of the GaAs spacer was comparable with the dot height. The ordering was found to be associated with relatively large InAs dots on the first layer. Quantum dots tend to become larger in size and more regular in plane with increasing numbers of stacks. Our results suggest that the vertical ordering is not only affected by strain from the InAs dots on the lower layer, but by total strain configuration in the multi-stacked structure.