Low-Temperature Preparation of Undoped ZnO Films with High Transparency and Conductivity by Ion Beam Deposition

摘要

Low-temperature growth of undoped ZnO films with high transparency and low electrical resistance was performed by ion beam sputtering. After systematic testing, resistivity as low as 2.95 × 10−3 Ω cm was obtained at a substrate temperature of 150°C, ion source voltage of 850 V, and ion beam current of 30 mA. The transmittance of the ZnO films was in the range of 85% to 90%. Hall measurements showed that a high mobility of 21.41 cm2/Vs was obtained for films less than 200 nm thick. The related microstructures and physical properties were measured and are discussed.