InAs_yP_1-y/InP quantum wells grown by solid source molecular beam epitazy using As_2 and As_4

摘要

Strained InAs_yP_1-y(y:0.3-0.75)/InP multiple quantum wells were grown on InP substrates by solid source molecular beam epitaxy using arsenic tetramer (As_4) and dimer (As_2). X-ray diffraction measurement and simulation reveal the high structural quality of the samples regardless of the arsenic species used, while the incorporation efficiency of As_2 is found to be higher than that of As_4. Room temperature and 10K photoluminescence (PL) measurements were performed to optically examine the samples.