The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

摘要

Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m~(-1).