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Ellipsometric study of the nucleation of (211) HgCdTe on CdZnTe(211)B

机译:(211)HgCdTe在CdZnTe(211)B上成核的椭圆仪研究

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We have grown numerous samples under Hg-deficient conditions, in order to study the formation of void defects, The surface morphology of all samples grown was characterized using optical and SEM microscopy. At the same time, the substrates were studied prior to nucleation using in situ spectroscopic ellipsometry (SE). We find a correlation between the ellipsometric signal prior to nucleation and the final morphology of the layers grown. We studied the Hg layer present at the surface before nucleation by RHEED, XPS and SE. A better model is proposed, which reflects the physical characteristics of the substrate surface.
机译:为了研究空隙缺陷的形成,我们已经在汞缺乏的条件下培养了许多样品。使用光学和SEM显微镜对所有生长样品的表面形态进行了表征。同时,在成核之前使用原位光谱椭偏仪(SE)对基质进行了研究。我们发现成核之前的椭圆偏振信号与生长的层的最终形态之间的相关性。我们研究了通过RHEED,XPS和SE成核之前存在于表面的汞层。提出了一个更好的模型,该模型反映了基材表面的物理特性。

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