Improvement of cubic GaN film crystal quality by use of an AlN/GaN ordered alloy on GaAs (100) by plasma assisted molecular beam epitaxy

摘要

We demonstrate cubic GaN film growth using a newly developed AlN/GaN ordered alloy grown on GaAs (100) by plasma assisted molecular beam epitaxy. A significant improvement in crystal quality was achieved by reducing the nitridation time in the initial growth stage of the Ⅲ-nitride layer. Epitaxial cubic GaN films with high phase purity were successfully grown. Film crystallographic qualities were investigated by RHEED, XRD, AFM, PL and TEM observations.