Cross-sectional scanning tunneling microscopy studies of lattice-matched InGaAs/InP quantum wells: variations in growth switching sequence

摘要

Cross-sectional scanning tunneling microscopy has been used to study variations in the source gas switching sequences in lattice-matched InGaAs/InP heterostructures grown by chemical beam epitaxy. Using finite element analysis, changes in well-barrier interface strain can be understood in terms of As/P exchange and As memory effect in the growth chamber. Results from annealed samples indicate a greater interdiffusion of group-Ⅴ species than group-Ⅲ species.