Interfacial Roughness of InGaAs/InP MultipleQuantum Well Structures Grown by MOVPE: A Cross-Sectional Scanning Tunneling Microscopy Study

摘要

Interfacial roughness of InxGa1-xAs/InP (x=0.53) multiplernquantum wells (MQW) grown by metalorganic chemical vapor phasernepitaxy has been investigated by cross-sectional scanning tunnelingrnmicroscopy (STM). The MQW structure is composed of 125 periods of 10rnnm-wide well layers and 40 nm-wide barrier layers on an InP (001)rnsubstrate. The observed STM images have revealed that the InGaAs-on-rnInP interface is extremely sharp compared to the InP-on-InGaAs interface,rnand As atoms are incorporated at the InP-on-InGaAs interface.