机译:具有TiN缓冲层的Si(00 1)衬底上(00 1)定向Pb(Zr_(0.52)Ti_(0.48))O_3 LaNiO_3薄膜的生长和性能
Singapore-MIT Alliance, AMM&NS, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore;
A1. physical vapor deposition processes; B1. perovskites; B2. ferro-electric materials;
机译:具有和不具有LaNiO_3缓冲层的哈氏合金衬底上Pb_(0.92)La_(0.08)Zr_(0.52)Ti_(0.48)O_3膜的介电谱
机译:改善溅射PB_(1.10)的电性能(Zr_(0.52),Ti_(0.48))O_3 / PB_(1.25)(Zr_(0.52),Ti_(0.48))O_3多层薄膜
机译:双面(Pb_(0.72)La_(0.28))Ti_(0.93)O_3缓冲层对Pb(Zr_(0.52)Ti_(0.48))O_3薄膜铁电性能的影响
机译:Cofe_2O_4薄膜厚度对(001)的多二二二核性的影响(Zr_(0.5)Ti_(0.5))O_3 / CoFe_2O_4 / Pb(Zr_(0.5)Ti_(0.5))O_3三层结构
机译:氮化锆/氮化铝缓冲层,用于在硅基板上外延生长(铟,镓)氮化物。
机译:在高度c轴取向的Pb(Zr0.52Ti0.48)O3薄膜中具有超低应变滞后的大压电应变并且在非晶玻璃基板上呈柱状生长
机译:具有TiN缓冲层的si(001)衬底上(001)取向的pb(Zr0.52Ti0.44)O3 / LaNiO 3薄膜的生长和性质