X-rary diffraction characterization of epitaxial zinc-blende GaN fimls on a miscut GaAs (0 0 1) substrates using the hydride vapor-phase epitaxy method

摘要

In this study, cubic GaN epitaxial films are grown on a 2 deg miscut GaAs(0 0 1) substrate by hydride vapor-phase epitaxy reactor with a low-temperature GaN buffer layer before the growth of the GaN epitaxy film. X-ray diffraction spectra reveal that the epitaxial film contains most of the zinc-blende GaN with a few percent of wurtzite GaN also embedded in the film. The crystalline coherence length of the zinc-blende GaN is 30 nm and the rocking curve width is 4.8 deg.