Delectric and pyroelectric properties of ordered CdZnTe layers grwoth by MOCVD

摘要

Cd_1-xZn_xTe (0.1≤x≤0.86) layers were epitaxially deposted on (1 0 0) CdTe and on Cd_0.96Zn_0.04Te substrates by MOCVD, and some of their electriicla and otpical properties were investigated. The dielecric cosntant as a funciton of temeprautre was found to have a peak at a Curie temepratue. At this same temeprature the slope of the resistivity showed a sharp change. It was found that the laeyrs were pyroelectric. The pyroelectic coefficient varied from k2.3×10~-11 to 5.1?10~-10 C K~-1 m~-2, depending on Zn content (x) and growth conditons. It was observed that the Curie temeprature shifts in the direction of hgiher temeprautres when the Zn content of the layers increases. The observed results are consistent with the results obtained on CdZnTe moncrystals. A correlation was obserged between the pyoelectric properties of CdZnTe and valuence band splitting effect, meausred by the photoluminescne method at 77 K.