Microelectronic compatible pyroelectric detector - has first contact in radiation receiving area and further contact between pyroelectric layer and supporting silicon substrate, which is etched away below pyroelectric layer to form free-supporting layer.

摘要

The detector (11) has a pyroelectric layer (15) with contacts on a silicon substrate (17). At least one contact is in a radiation sensitive region of the pyroelectric layer, and another contact is between the substrate and the pyroelectric layer. The silicon substrate is removed in the radiation sensitive region (18) under the pyroelectric layer such that only an outer silicon frame (20) is formed. Thus the pyro-electric layer is quasi-self-supporting in this region. Pref. the silicon substrate has a specified crystal-graphite orientation. There is typically a thin, flat electrode (19) on the frame facing layer. ADVANTAGE - High sensitivity, and simple mfg. by known semiconductor technology.