Stress and misoriented area formaion under large silicon carbide boule growth

摘要

The presence of slightly misoriented (less than 1 deg) comparativley large areas in silicon carbide boules grown by teh sublimaion method is one of the types of defects which can limit the operation of devices based upon such material. 6H- and 4H-SiC boules were grown by the modified Lely metho elaborated at the St.-Peersburg Electrotechnical University. formation of stress and misoriented areas in SiC crsytals has been investigated. Nondesructie technqieus for such materila characterization have been developed.