Stimulted emission from optically pumped cubic GaN/AlGaN double heterostructures

摘要

Cubioc GaN/AlGaN heterostructures were grown on semi-insulating GaAs(1 0 0) substrtes by metalorganic vaporphase epitaxyk. Optical pumping experiments were performed on cubic GaN/AlGaN cavities, which were formed simply by cleaving the substrate. Strong stimulated emission at a wavelength of 394 nm was observed from the cleaved edge of the optically pumped cubic GaN/AlGaN heterostructures at 15 K. The stimulated emission was demonstrated by the superlinear increase of the output intensity and the highly TE-polarized nature. Besides this strong stimulated emission, an additional stimulated emission centered at 383 nm is also observed from some samples.