MOVPE growth of Al-free 808 nm high power lasers using TBP and TBA in pure N_2 ambient

摘要

In metalorganic vapor-phase epitaxy (MOVPE) growth of Ⅲ-Ⅴ semiconductor compounds and device structures, arsine (AsH_3) and phosphine (PH_3) are normally used as group Ⅴ precursors and hydrogen is used as the carrier gas, which is very toxic and has safety hazard. In this contribution, MOVPE growths of Al-free 808 nm high power diode lasers by using metalorganic (MO) group Ⅴ sources, TBAs and TBP, and nitrogen as carrier gas has been reported. InGaAsP/InGaP/GaAs single quantum well (SQW) high power laser structure emitting at 808 nm has been adopted to characterize the material quality. Broad area stripe lasers with the stripe width of 150 μm have been fabricated from the wafers grown by the MOVPE using MO group Ⅴ sources. Lasing of the device with threshold current density of 506 A/cm~2 has been successfully achieved.