Fabrication of large-scale, layer-deposited, low oxygen-content and uniform silicon nanowires

摘要

We report a new route to fabricate layer-deposited, low oxygen content and uniform silicon nanowires on a large scale, using hydrogen and quartz crystals as source materials in high-temperature furnace. Scanning electron microscopy images reveal that the morphology of the sample is wire shaped, with the average diameter of 65 nm. Energy dispersive X-ray spectra present the composition of the low-oxygen content products with the atom ratio of silicon to oxygen of 96.5:3.5.