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Epitaxial growth of InN films on lattice-matched EuN buffer layers

机译：晶格匹配的EuN缓冲层上InN薄膜的外延生长

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摘要

Indium nitride (InN) films have been grown on lattice matched europium nitride (EuN) buffer layers by pulsed laser deposition (PLD) and their structural properties have been investigated. It has been revealed that the growth of EuN films on Al_2O_3 (0001) substrates leads to the formation of polycrystalline EuN films, whereas epitaxial EuN (111) films grow on MgO (111) substrates at 860 ℃. By using the EuN (111) films as buffer layers for InN growth, we have succeeded in the epitaxial growth of InN (0001) films at 490 ℃ with an in-plane epitaxial relationship of [1120]_(InN)[110]_(EuN)[110]_(MgO), which minimized the lattice mismatch between InN and EuN.
机译：氮化铟（InN）膜已通过脉冲激光沉积（PLD）在晶格匹配的氮化euro（EuN）缓冲层上生长，并对其结构特性进行了研究。揭示了在Al_2O_3（0001）衬底上生长EuN薄膜导致形成多晶EuN薄膜，而在860℃下在MgO（111）衬底上生长外延EuN（111）薄膜。通过使用EuN（111）膜作为InN生长的缓冲层，我们成功地在490℃下以[1120] _（InN）[110] _的面外延关系成功生长了InN（0001）膜。 （EuN）[110] _（MgO），从而最小化了InN和EuN之间的晶格失配。

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  • 来源
    《Journal of Crystal Growth》 |2009年第20期|4483-4485|共3页
  • 作者

    K. Shimomoto; J. Ohta; T. Fujii; R. Ohba; A. Kobayashi; M. Oshima; H. Fujioka;

  • 作者单位

    Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505, Japan;

    Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505, Japan;

    Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505, Japan;

    Department of Applied Chemistry, The University of Tokyo, 4-3-1 Hongo, Tokyo 113-8656, Japan;

    Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505, Japan Department of Applied Chemistry, The University of Tokyo, 4-3-1 Hongo, Tokyo 113-8656, Japan;

    Department of Applied Chemistry, The University of Tokyo, 4-3-1 Hongo, Tokyo 113-8656, Japan Core Research for Evolutional Science and Technology of Japan Science and Technology Corporation (JST-CREST), 3-5 Chiyoda-ku, Tokyo 102-0075, Japan;

    Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505, Japan Core Research for Evolutional Science and Technology of Japan Science and Technology Corporation (JST-CREST), 3-5 Chiyoda-ku, Tokyo 102-0075, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Surface morphology; A3. Laser epitaxy; B1. Nitrides;

    机译：A1。表面形态A3。激光外延;B1。氮化物;

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