机译:温度和载气流量对HVPE法形成GaN纳米棒的影响
Department of Applied Science, Korea Maritime University, Busan 606 791, Korea;
Department of Applied Science, Korea Maritime University, Busan 606 791, Korea;
Department of Applied Science, Korea Maritime University, Busan 606 791, Korea;
Department of Applied Science, Korea Maritime University, Busan 606 791, Korea;
Department of Applied Science, Korea Maritime University, Busan 606 791, Korea;
Department of Applied Science, Korea Maritime University, Busan 606 791, Korea;
Division of Advanced Technology, Korea Research Institute of Standards and Science, Daejeon 305, Korea;
Division of Advanced Technology, Korea Research Institute of Standards and Science, Daejeon 305, Korea;
Department of Electronics Engineering, Catholic University of Deagu, Hayang, Kyeongbuk 702 701, Korea;
A1. Low dimensional structures; A1. Nanostructures; A3. Hydride vapor phase epitaxy; B2. Semiconducting III-V materials;
机译:HCl流量调节生长温度对HVPE对厚GaN表面和晶体质量的影响
机译:残余应变对使用HVPE生长的自组织GaN垂直纳米棒的发光特性的影响
机译:在GaN纳米棒中生长有GaN表面势垒的In_xGa_(1-x)N / GaN多量子盘的载流子限制效应
机译:原位测量GaN表面温度,载气变化和卫星旋转速度对温度型材的影响
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:直接模拟蒙特卡洛法研究载气流速和源电池温度对低压有机气相沉积模拟的影响
机译:通过HVPE生长的R面蓝宝石对1000℃的生长温度和V / III比率的影响