机译:6H-SiC单晶中取向错误的畴形成
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China Graduate School of the Chinese Academy of Sciences, Beijing 100049, China;
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China Graduate School of the Chinese Academy of Sciences, Beijing 100049, China;
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China Graduate School of the Chinese Academy of Sciences, Beijing 100049, China;
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
A1. Computer simulation; A1. Defects; A2. Single crystal growth; B2. Semiconducting materials;
机译:PVT法生长的6H-SiC单晶中失配域形成的影响因素
机译:在精确且取向错误的单晶上生长同质外延GaN:抑制小丘形成
机译:PVT法生长6H-SiC块状单晶中缺陷形成的特殊性
机译:在6H-SIC单晶中生长诱导的聚卵结构的进化根
机译:铁电单晶和多晶陶瓷中的畴转换和微裂纹。
机译:单晶6H-SiC滑移变形的原子尺度表征和纳米可加工性
机译:单晶6H-SiC的滑动变形和纳米机械性的原子尺度表征
机译:6H-sIC单晶缺陷的白光束同步加速器地形研究