Evolution Roots of Growth-induced Polytype Domains in 6H-SiC Single Crystals

摘要

We present experimental results with regard to the evaluation of growth-induced polytype domains in 6H-SiC crystals grown by sublimation method and these domains are characterized by using the polarized optical microscopy and micro-Raman spectroscopy. The polytype domains of reverse triangular are generated by local variation of temperature along c-direction and spread-wing shapes normally occurred forming micropipes in many cases. These polytype domains may be generated due to the local variation of supersaturation and/or temperature at central position during crystal growth. In this work, we try to elucidate the origin and mechanism responsible for growth-induced polytype domains.