首页> 外文期刊>Journal of Crystal Growth >NdSrNi_(0.8)Cu_(0.2)O_(4-δ) thin films epitaxially grown by pulsed laser deposition on LaAlO_3 and SrTiO_3: A potential electrode for epitaxial regrowth of perovskite structure-based oxides
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NdSrNi_(0.8)Cu_(0.2)O_(4-δ) thin films epitaxially grown by pulsed laser deposition on LaAlO_3 and SrTiO_3: A potential electrode for epitaxial regrowth of perovskite structure-based oxides

机译:在LaAlO_3和SrTiO_3上通过脉冲激光沉积外延生长的NdSrNi_(0.8)Cu_(0.2)O_(4-δ)薄膜:钙钛矿结构基氧化物外延再生的潜在电极

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摘要

NdSrNi_(0.8)Cu_(0.2)O_(4-δ) (NSNCO) thin films were grown by pulsed laser deposition (PLD) on LaAlCb and (110)SrTiO_3 substrates. NSNCO thin films were (0 01) and (103) oriented on (100) LaAlO_3 and (110)SrTiO_3, respectively, as evidenced by the θ-2θ X-ray diffraction. The high crystalline quality was illustrated by low value of rocking curve (△ω=0.1-0.5° for (001) films and about 1° for (103) films). In-plane ordering was probed by X-ray diffraction φ-scans, evidencing the epitaxial growth on both substrates. The microstructure of films investigated by scanning electron microscopy was strongly influenced by deposition conditions. Four probe electrical resistivity measurements were performed versus temperature in the range 77-300 K. The resistivity was found to be 0.004Ω cm at room temperature. Some bilayers combining a ferroelectric oxide and NSNCO, i.e. SrBi_2Nb_2O_9 (SBN) and NdSrNi_(0.8)Cu_(0.2)O_(4-δ), were grown by PLD on both substrates. The possibility to control (001)- and (116)-oriented epitaxial SBN thin films was proved by the X-ray diffraction analysis.
机译:NdSrNi_(0.8)Cu_(0.2)O_(4-δ)(NSNCO)薄膜通过在LaAlCb和(110)SrTiO_3衬底上的脉冲激光沉积(PLD)生长。如θ-2θX射线衍射所示,NSNCO薄膜分别在(100)LaAlO_3和(110)SrTiO_3上取向为(0 01)和(103)。摇摆曲线的低值说明了高结晶质量((001)膜的△ω= 0.1-0.5°,(103)膜的约1°)。通过X射线衍射φ扫描探测面内有序性,证明在两个基板上都进行了外延生长。通过扫描电子显微镜研究的膜的微观结构受到沉积条件的强烈影响。在77-300 K范围内对温度进行了四个探针电阻率测量。发现室温下的电阻率为0.004Ωcm。通过PLD在两个衬底上生长了结合铁电氧化物和NSNCO的一些双层,即SrBi_2Nb_2O_9(SBN)和NdSrNi_(0.8)Cu_(0.2)O_(4-δ)。通过X射线衍射分析证明了控制(001)和(116)取向的外延SBN薄膜的可能性。

著录项

  • 来源
    《Journal of Crystal Growth》 |2009年第9期|2746-2752|共7页
  • 作者单位

    Unite Sciences Chimiques de Rennes, UMR 6226 CNRS/Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes, France Unite de Recherche de Chimie des Materiaux, ISSBAT, Universite de Tunis El Manar 9, Avenue Zoheir Safi, 1006 Tunis, Tunisie;

    Unite Sciences Chimiques de Rennes, UMR 6226 CNRS/Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes, France;

    Unite Sciences Chimiques de Rennes, UMR 6226 CNRS/Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes, France;

    Unite de Recherche de Chimie des Materiaux, ISSBAT, Universite de Tunis El Manar 9, Avenue Zoheir Safi, 1006 Tunis, Tunisie;

    Unite Sciences Chimiques de Rennes, UMR 6226 CNRS/Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes, France;

    Unite Sciences Chimiques de Rennes, UMR 6226 CNRS/Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A3. physical vapor deposition processes; A3. pulsed laser deposition (PLD); B1. nickelates; B1. perovskites; B2. conducting oxides; B2. ferroelectric materials;

    机译:A3。物理气相沉积过程;A3。脉冲激光沉积(PLD);B1。镍酸盐B1。钙钛矿B2。导电氧化物B2。铁电材料;
  • 入库时间 2022-08-17 13:19:54

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