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CUBIC METAL OXIDE THIN FILM EPITAXIALLY GROWN ON SILICON
CUBIC METAL OXIDE THIN FILM EPITAXIALLY GROWN ON SILICON
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机译:硅上立方生长的金属氧化物薄膜表观生长
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摘要
A method of forming crystalline metal oxide thin films on silicon and the resultant structure. A crystalline buffer layer (10) of yttria-stabilized zirconia is deposited on a silicon substrate (12). A thin template layer (10) of an anisotropic perovskite such as bismuth titanate or yttria barium copper oxide is deposited on the template layer under conditions favoring c-axis oriented growth. A nominally cubic metal-oxide layer (16) is deposited on the template layer which facilitates its singly crystalline growth. The metal oxide, often a nominally cubic perovskite, may be a conductive electrode, a ferroelectric, a non-hysteretic dielectric, a piezoelectric, or other class of material.
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