机译:锗共掺杂的直拉硅晶体生长过程中Ga偏析
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;
rnResearch Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan;
rnInstitute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;
rnInstitute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;
A1. Ga and Ge codoping; A1. Point defect; A2. Czochralski method; A2. Single crystal growth; B2. Semiconductor silicon; B3. Solar cells;
机译:B中Ge的偏析和Ge共掺杂的Cchchralski-Si晶体的生长
机译:B共掺杂下Czochralski-Si晶体生长中的Ga偏析
机译:退火过程中氧气沉淀对直拉硅晶体生长条件下寿命退化的影响
机译:(CR,CA)编排纳米晶二氧化碳的分离和颜色变化
机译:受晶界偏析抑制的纳米晶体中应力辅助晶粒的生长。
机译:掺杂Er3 +和Er3 + / Yb3 +掺杂的Li3Ba2La3(WO4)8晶体的生长,热学和光谱性质
机译:掺Yb和掺Na的PbF2激光晶体的晶体生长和光谱表征