机译:低压氢化物气相外延生长在6H-SiC上生长的非极性AlN的面内结构各向异性和极化拉曼活性模式研究
Department of Electrical and Electronics Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-8507, Japan;
rnDepartment of Electrical and Electronics Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-8507, Japan;
rnDepartment of Electrical and Electronics Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-8507, Japan;
rnDepartment of Electrical and Electronics Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-8507, Japan;
rnDepartment of Electrical and Electronics Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-8507, Japan;
rnResearch center for Nano-devices and System, Nagoya Institute of Technology, Gokiso-Cho, Showa-Ku, Nagoya 466-8555, Japan;
rnResearch center for Nano-devices and System, Nagoya Institute of Technology, Gokiso-Cho, Showa-Ku, Nagoya 466-8555, Japan;
A1. In-plane anisotropy; A1. Nonpolar; A1. Raman spectrum; A3. Hydride vapor phase epitaxy; B2. a-plane and m-plane A1N; B2. SiC substrate;
机译:氢化物气相外延法将自生半极性AlN晶粒嵌入在蓝宝石上生长的c取向AlN基体中的准横向光子模
机译:氢化物气相外延生长在纳米柱/图案化SiO2上的AlN的结构和光学性质
机译:在氢化物气相外延生长的低缺陷密度极性和非极性独立式GaN衬底上的时间分辨光致发光,正电子ni灭和Al0.23Ga0.77N / GaN异质结构生长研究
机译:氢化物气相外延生长的GaN的光学和结构性质研究
机译:通过氢化物气相外延生长的非极性氮化镓膜的结构。
机译:氢化物气相外延生长在AlN纳米图案蓝宝石模板上的AlGaN外延层的结构和应力特性
机译:氢化物气相外延在ALN / PSS模板上生长的GaN膜的性质