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机译:(0001)蓝宝石上高温AlN缓冲层上的低位错密度GaN生长
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom;
rnDepartment of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom;
rnDepartment of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom;
rnDepartment of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom;
rnDepartment of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom;
A3: Metalorganic vapour phase epitaxy; B1: Nitrides; B2: Semiconducting III-V materials;
机译:在蓝宝石(0001)上的高电子迁移率AlN,通过溅射和高温退火制备低位锁定密度
机译:使用高温GaN中间层减少在AlN /蓝宝石模板上生长的AlGaN层中的螺纹位错
机译:通过低温MBE控制在Si(111)衬底上生长的厚GaN / AlN缓冲层中的应力和螺纹位错密度
机译:低位脱位密度和高迁移率GaN层,用于通过氨MBE在高温AlN / AlGaN缓冲层上生长的DHFET通道
机译:具有非常低的螺纹位错密度的氮化镓层的生长。
机译:在c面蓝宝石上生长具有高温AlN缓冲液的氮极(000 ... ... ...)GaN
机译:在轴上蓝宝石衬底上的N极性GaN的mOCVD生长:alN的影响 GaN表面小丘密度上的成核层