机译:用5 MeV质子辐照的AlGaN / GaN高电子迁移率晶体管的光电特性
Department of Chemical & Biological Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul, Republic of Korea;
D4555 Overlook Ave. SW, US Naval Research Laboratory, Washington DC 20375, USA;
D4555 Overlook Ave. SW, US Naval Research Laboratory, Washington DC 20375, USA;
D4555 Overlook Ave. SW, US Naval Research Laboratory, Washington DC 20375, USA;
Department of Chemical Engineering, Dankook University, Yongin 448-701, South Korea;
D4555 Overlook Ave. SW, US Naval Research Laboratory, Washington DC 20375, USA;
D4555 Overlook Ave. SW, US Naval Research Laboratory, Washington DC 20375, USA;
Department of Chemical & Biological Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul, Republic of Korea;
A1. Photoluminescence; A1. Radiation; B2. Semiconducting Gallium Compounds; B3. High Electron Mobility Transistor;
机译:100 keV质子辐照对AlGaN / GaN高电子迁移率晶体管(HEMT)的电子和光学性能的影响
机译:高流量质子辐照的AlGaN / GaN高电子迁移晶体管的氢相关恢复效果
机译:质子辐射对抑制AlGaN / GaN高电子迁移率晶体管电流崩塌的影响
机译:质子辐照的AlGaN-GaN高电子迁移率晶体管和AlGaN肖特基二极管的电学特性
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:具有再生欧姆接触的半绝缘Ammono-GaN衬底上的AlGaN / GaN高电子迁移率晶体管
机译:太赫兹光学霍尔效应表征二维 alGaN / GaN高电子迁移率中的电子气特性 晶体管结构