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机译:质子辐射对抑制AlGaN / GaN高电子迁移率晶体管电流崩塌的影响
CMST, Ghent University, Ghent, Belgium;
Department of Information Engineering, University of Padua, Padua, Italy;
Department of Information Engineering, University of Padua, Padua, Italy;
Center for Device Thermography and Reliability, University of Bristol, Bristol, U.K.;
ON Semiconductor, Oudenaarde, Belgium;
Department of Information Engineering, University of Padua, Padua, Italy;
Department of Information Engineering, University of Padua, Padua, Italy;
Department of Information Engineering, University of Padua, Padua, Italy;
Department of Information Engineering, University of Padua, Padua, Italy;
Department of Information Engineering, University of Padua, Padua, Italy;
ON Semiconductor, Oudenaarde, Belgium;
CMST, imec, Ghent University, Ghent, Belgium;
Radiation effects; Protons; Gallium nitride; Logic gates; Transistors; Aluminum gallium nitride; Wide band gap semiconductors;
机译:具有和不具有表面钝化的无电流崩塌i-GaN / AlGaN / GaN高电子迁移率晶体管
机译:高流量质子辐照的AlGaN / GaN高电子迁移晶体管的氢相关恢复效果
机译:通过氧等离子体处理和场板结构的组合应用,大大降低了AlGaN / GaN高电子迁移率晶体管中的电流崩溃
机译:表面钝化对质子辐照的抗旱性AlGaN / GaN Hemts电流塌陷的影响
机译:在AlGaN / GaN高电子迁移率晶体管上进行等离子增强化学气相沉积的氮化硅钝化的热稳定性。
机译:AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
机译:多台面沟道AlGaN / GaN高电子迁移率晶体管中几乎与温度无关的饱和漏极电流
机译:偏压应力在alGaN / GaN高电子迁移率晶体管中引起的电流崩塌;杂志文章