The formation of InZnO lattices incorporating Ba for thin-film transistors using a solution process

摘要

We introduce solution-processed BalnZnO (BIZO) thin-film transistors (TFTs) with different atomic percentages of Ba. The effects of incorporating Ba on the InZnO (IZO) lattice were investigated using the hysteresis behavior, thermogravimetry, differential thermal analysis, and X-ray diffraction patterns. As the atomic percentage of Ba was increased, the turn-on voltage shifted in a positive direction and the off-current decreased, to about 10~(-11) A. Excess Ba led to degradation of the subthreshold swing. The optimized electrical characteristics of BIZO TFTs were observed with Ba 10% and Ba can replace the Ga in the IZO lattice.