机译:通过脉冲金属有机化学气相沉积在蓝宝石上生长的高质量InAlN / GaN异质结构
School of Microelectronics, Xidian University, Xi'an 710071, China,Key Laboratory of Wide Band-Gap Semiconductors and Devices, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China,Key Laboratory of Wide Band-Gap Semiconductors and Devices, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China,Key Laboratory of Wide Band-Gap Semiconductors and Devices, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China,Key Laboratory of Wide Band-Gap Semiconductors and Devices, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China,Key Laboratory of Wide Band-Gap Semiconductors and Devices, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China,Key Laboratory of Wide Band-Gap Semiconductors and Devices, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China,Key Laboratory of Wide Band-Gap Semiconductors and Devices, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China,Key Laboratory of Wide Band-Gap Semiconductors and Devices, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China,Key Laboratory of Wide Band-Gap Semiconductors and Devices, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China,Key Laboratory of Wide Band-Gap Semiconductors and Devices, Xi'an 710071, China;
A1. Surface structure; A3. Metal organic chemical vapor deposition; B1. Nitrides; B2. Semiconducting Ⅲ-Ⅴ materials; B2. Semiconducting indium compounds;
机译:脉冲金属有机化学气相沉积TMIn脉冲持续时间对蓝宝石上生长的InAlN / GaN异质结构性能的影响
机译:AlN中间层对通过脉冲金属有机化学气相沉积在蓝宝石上生长的几乎晶格匹配的InAlN / GaN异质结构的输运性能的影响
机译:生长温度对c面蓝宝石上脉冲金属有机化学气相沉积生长的InAIN / GaN异质结构的结构和电性能的影响
机译:脉冲激光沉积在c-蓝宝石上生长的ZnO薄膜的特性作为金属有机化学气相沉积法再生ZnO的模板
机译:晶格匹配的III-V / IV组半导体异质结构:金属有机化学气相沉积和远程等离子体增强化学气相沉积。
机译:金属有机化学气相沉积在蓝宝石衬底上生长的低Al成分p-GaN / Mg掺杂Al0.25Ga0.75N / n + -GaN极化诱导的反向隧穿结
机译:通过金属有机化学气相沉积在蓝宝石衬底上生长的alN / GaN金属 - 绝缘体 - 半导体结构的电容 - 电压表征
机译:GaInasp / Inp 1.35微米双异质结构激光器通过金属有机化学气相沉积在硅基板上生长