机译:用于分子束外延合成高迁移率结构的天然氧化物热解吸后,GaAs(100)表面的光滑度和清洁度
Department of Electrical Engineering, Princeton University, Princeton, NJ 08540, USA;
Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, NJ 08540, USA;
Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, NJ 08540, USA;
Department of Electrical Engineering, Princeton University, Princeton, NJ 08540, USA,Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, NJ 08540, USA;
A1. Atomic force microscopy; A1. Desorption; A1. Roughening; A1. Secondary ion mass spectroscopy; A3. Molecular beam epitaxy; A3. Quantum wells;
机译:AlGaAs天然氧化物掩膜对GaAs的区域选择性外延分子束外延
机译:在(100)和(311)B GaAs衬底上通过分子束外延生长的GaAs_(1-x)Bi_x / GaAs量子阱结构的光学性质
机译:使用分子束外延在无砷(Ga)/ Ge / GaAs异质结构的无砷环境中原位生长Ge(100)
机译:通过直接Ga束辐照原位控制GaAs表面天然氧化物的解吸过程
机译:通过分子束外延生长低无序GaAs / AlGaAs异质结构,以研究二维相关电子相。
机译:分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质:热退火的影响
机译:通过分子束外延生长的GaAs1-Xbix / GaAs量子阱结构的光学性质(100)和(311)B GaAs基材
机译:通过分子束外延在Gaas衬底上的Inalas缓冲层上生长的InGaas / alGaas子带间跃迁结构