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机译:生长温度对HVPE生长的Al_xGa_(1-x)N外延层性能的影响
Department of Materials Science and Engineering, Korea University, Seoul 136-701, Republic of Korea Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Republic of Korea;
Department of Materials Science and Engineering, Korea University, Seoul 136-701, Republic of Korea;
LumiGNtech Co., 233-5 Casan-dong, Guemcheon-gu, Seoul 153-801, Republic of Korea;
LumiGNtech Co., 233-5 Casan-dong, Guemcheon-gu, Seoul 153-801, Republic of Korea;
LumiGNtech Co., 233-5 Casan-dong, Guemcheon-gu, Seoul 153-801, Republic of Korea;
Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Republic of Korea;
Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Republic of Korea;
Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Republic of Korea;
A1. Compositional non-uniformityl; A1. Growth temperature; A3. HVPE; B1.AlGaN;
机译:高温AlN缓冲层厚度对HVPE生长的Al_xGa_(1-x)N外延层性能的影响
机译:通过金属有机化学气相沉积在具有薄的非线性成分分级的Al_xGa_(1-x)N中间层的Si(111)上生长的高质量GaN外延层
机译:金属有机化学气相沉积法在Si衬底上生长GaN外延层的Al_xGa_(1-x)N中间层的作用
机译:Mocvd生长的Al_xGa_(1-x)N外延层的载流子复合动力学
机译:在4H和6H碳化硅衬底上生长的砷化硼外延层的生长机理和缺陷结构。
机译:GaAs(110)上生长的MnAs外延层应变诱导的高铁磁转变温度
机译:通过HVPE生长的R面蓝宝石对1000℃的生长温度和V / III比率的影响