机译:三甲基铝流量不同功能生长的成分梯度AlGaN缓冲层对Si(111)衬底上GaN性能的影响
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;
A1. Fluid flows; A1. Growth models; A1. Stresses; A3. Metal organic chemical vapor deposition; B1. Nitrides; B2. Semiconducting Ⅲ-Ⅴ materials;
机译:AlN缓冲层厚度对AlGaN夹层在Si(111)衬底上生长的GaN外延层结构性能的影响
机译:具有AlN / AlGaN缓冲层的Si(111)基板上三维生长的GaN岛中的螺纹位错减少
机译:用ALN / AlGaN缓冲层的Si(111)衬底上三维生长的GaN岛的穿线脱位减少
机译:GaN缓冲层厚度对等离子辅助分子束外延技术在Si(111)衬底上生长的AlGaN / GaN基高电子迁移率晶体管结构的结构和光学性能的影响
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:使用不同缓冲层配置的200mm硅(111)衬底上的AlGaN / GaN高电子迁移率晶体管结构研究
机译:用透射电子显微镜分析在alGaN / alN应变层超晶格的4英寸si(111)衬底上生长的GaN层中c + a和-c + a位错之间的反应