机译:快速热处理后高Sn含量,压缩应变的GeSn外延膜的材料表征
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA,420 Via Ortega, Allen-X 126X, Stanford, CA 94305, USA;
Applied Materials, Inc., Sunnyvale, CA 94085, USA;
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA;
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA;
Applied Materials, Inc., Sunnyvale, CA 94085, USA;
Applied Materials, Inc., Sunnyvale, CA 94085, USA;
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA;
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA;
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA;
A1. Photoluminescence; A1. Segregation; A3. Chemical vapor deposition; B1. Alloys; B2. GeSn; B2. Semiconducting germanium;
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