Drift mobility measurements on undoped Cd_(0.9)Zn_(0.1)Te grown by high-pressure Bridgman technique

摘要

The electron drift mobility of undoped Cd_(0.9)Zn_(0.1)Te grown by high-pressure Bridgman method is measured by time-of-flight technique. Room temperature mobility of 950 cm~2/Vs is measured, while it increases to 3000 cm~2/Vs at 100 K. The dominant scattering mechanism for the electron transport is discussed by comparing with the theoretical mobility obtained by iterative solution of the Boltzmann equation.