Influence of carrier gas on the morphology and structure of GaN layers grown on sapphire substrate by six-wafer metal Organic chemical vapor deposition system

摘要

The influence of hydrogen and nitrogen III-carrier gas mixture on the GaN layers grown at a high temperature of 1100 deg C by a novel six-wafer metal-organic chemical vapor deposition (MOCVD) were studied using optical microscopy, X-ray diffraction (XRD), and photoluminescence (PL).The different ratio of nitrogen and hydrogen of III- carrier gas strongly affect the growth mechanism of GaN layers. In the case of higher ratio of N_2/(N_2+H_2), the surface shows a hillock morphology.