Defect generation in multi-stacked InAs quantum dot/GaAs structures

摘要

InAs self-assembled quantum dots (SAQDs) were grown on GaAs(100) substrates using a molecular beam epitaxy (MBE) technique. The InAs QDs were multi-stacked with 6, 10 and 15 layers in which 2 monolayer (ML) thick InAs QD layers and 20 ML thick GaAs spacers were alternately positioned. The nanostructural features of the QD multi-stacked layers were characterized by scanning transmission electron microscopy (STEM).