Investigation of semi-insulating oxygen-doped GaAs

摘要

We found Oxygen-doped GaAs crystals to be suitable materials for CO_2 laser optical component preparation, with application at 10.6 μm. An optical transmission of 55/100 in the IR spectrum range, between 2 and 15 μm has been reached for such a GaAs type material. The GaAs crystals that we have analysed were grown by two procedures: Horizontal Bridgman(HB) and Liquid Encapsulated Czochralski (LEC). The HB method has been used for obtaining Pure(undoped) crystals, while the oxygen-doped GaAs ingots were grown by LEC techniques. the two types of samples Processed in the same manner as regards mechanical polishing and chemical etching, which were investigated by Hall Measurements, optical transmission spectrometry and elastic recoil detection analysis (ERDS) technique.