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Simulations of Voltage Clamping Poorly Space-Clamped Voltage-Dependent Conductances in a Uniform Cylindrical Neurite

机译:均匀圆柱神经突中电压钳制差的空间钳位电压相关电导的仿真

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Significant error is made by using a point voltage clamp to measure active ionic current properties in poorly space-clamped cells. This can even occur when there are no obvious signs of poor spatial control. We evaluated this error for experiments that employ an isochronal I (V) approach to analyzing clamp currents. Simulated voltage clamp experiments were run on a model neuron having a uniform distribution of a single voltage-gated inactivating ionic current channel along an elongate, but electrotonically compact, process. Isochronal Boltzmann I(V) and kinetic parameter values obtained by fitting the Hodgkin-Huxley equations to the clamp currents were compared with the values originally set in the model. Good fits were obtained for both inward and outward currents for moderate channel densities. Most parameter errors increased with conductance density. The activation rate parameters were more sensitive to poor space clamp than the I(V) parameters. Large errors can occur despite "normal'-looking clamp curves.
机译:通过使用点电压钳来测量空间受限的电池中的有源离子电流特性,会产生很大的误差。当没有明显的空间控制不良迹象时,甚至可能发生这种情况。我们针对采用等时I(V)方法分析钳位电流的实验评估了该误差。模拟电压钳实验是在模型神经元上进行的,该模型神经元沿着细长但电声致密的过程具有单个电压门控灭活离子电流通道的均匀分布。通过将Hodgkin-Huxley方程拟合到钳位电流获得的等时Boltzmann I(V)和动力学参数值与模型中最初设置的值进行了比较。对于中等密度的通道密度,对于内向和外向电流均获得了良好的拟合。大多数参数误差随电导密度的增加而增加。激活速率参数比I(V)参数对差的空间钳位更加敏感。尽管钳形曲线看起来“正常”,但仍可能出现较大的误差。

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