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Simulations of space-clamp errors in estimating parameters of voltage-gated conductances localized at different electrotonic distances

机译:模拟在不同电声距离下的电压门控电导参数估计中的空间钳制误差

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The ability to correct parameters of voltage-gated conductances measured under poor spatial control by a point voltage clamp could rescue much flawed experimental data, but requires a detailed understanding of errors caused by poor space clamp. We evaluated errors in simulated voltage-clamp experiments on a soma with a single (0.5 λ) cylindrical process having a patch of voltage-dependent Hodgkin-Huxley channels placed at various distances from the soma. Kinetic and steady-state parameters were obtained by fitting the current curves. Most parameter errors increased as the patch was located more distally on the neurite.
机译:校正由点电压钳位在空间控制差的情况下测得的电压门控电导参数的能力可以挽救许多有缺陷的实验数据,但需要详细了解由空间钳位差引起的误差。我们通过单个(0.5λ)圆柱体过程在模拟的电压钳制实验中评估了误差,该过程具有一个与电压相关的霍奇金-赫克斯利通道的补丁,这些霍奇金-赫克斯利通道放置在距躯体不同距离处。通过拟合电流曲线获得动力学和稳态参数。当贴片位于神经突的远端时,大多数参数误差会增加。

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