Quantum Ensemble Monte Carlo simulation of silicon-based nanodevices

摘要

A Quantum Ensemble Monte Carlo (QEMC) simulator is used to calculate electrical characteristics and transient response of actual nanotransistors: both sub-50 nm CMOS N-MOSFETs and ultrathin double gate SOI transistors have been deeply studied. Doping profiles and oxide thickness have been selected to cope with the available specifications of the ITRS Roadmap. The Quantum corrected Ensemble Monte Carlo simulator (QEMC) has been used to self-consistently solve the Boltzmann Transport and Poisson equations in actual devices. Quantum effects are included through the Multi-Valley Effective Conduction Band Edge (MV-ECBE) technique, and adequate approaches for phonon and surface roughness scattering have been developed to include the effects of carrier quantization in pseudo-2DEG simulations.