Self-consistent treatment of quantum transport in 10 nm FinFET using Contact Block Reduction (CBR) method

摘要

A fully quantum mechanical approach must be utilized to investigate the characteristics of nanoscale semiconductor devices and capture the essential physics with high accuracy. In this work a very efficient quantum mechanical transport simulator based on Contact Block Reduction (CBR) method is used to analyze the behavior of 10 nm FinFET device in the quasi-ballistic regime of operation. Simulation results depict the transformation of multiple channels into a single merged channel across the fin as the fin width is reduced gradually. Also we observe that short channel effects can be minimized by reducing the fin thickness, which is evident from the device transfer characteristics for different fin thickness presented in this paper. A comparison of simulation results with the available experimental data is presented. An optimized 10 nm gate length FinFET structure is suggested.