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NEMO-3D based atomistic simulation of a double quantum dot structure for spin-blockaded transport

机译:基于NEMO-3D的双量子点结构自旋受阻传输的原子模拟

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This work combines an atomistic electronic structure calculation with many-body rate equations to simulate the current-voltage (Ⅰ-Ⅴ) characteristics of a weakly-coupled Double Quantum Dot (DQD) system in the spin-blockade regime. Here we performed a NEMO-3D based, atomistic simulation of the geometry of the DQD to obtain its single electron eigen-states, hopping parameters, and Coulomb integrals followed by the evaluation of Ⅰ-Ⅴ characteristics with the many-electron spectrum of the DQD system, derived from this single-electron parameter set. The many-electron spectra and wave-functions are evaluated by exact-diagonalization of the many-electron system. The Hamiltonian is constructed from single electron eigen-states, hopping parameters and Coulomb integrals derived from atomistic NEMO 3-D simulations. Calculated Ⅰ-Ⅴ characteristics exhibit multiple regions of prominent Negative Differential Resistances (NDRs) that resemble the experimental trends. Unlike resonant tunnelling devices, however, level crossings in DQDs are negligible, and the NDRs result from a delicate interplay of delocalization, orbital offset and Coulomb interaction.
机译:这项工作将原子电子结构计算与多体速率方程相结合,以模拟在自旋封锁状态下弱耦合双量子点(DQD)系统的电流-电压(I-Ⅴ)特性。在这里,我们对DQD的几何结构进行了基于NEMO-3D的原子模拟,以获得其单电子本征态,跳跃参数和库仑积分,然后使用DQD的多电子光谱评估Ⅰ-Ⅴ特性系统,从此单电子参数集得出。多电子光谱和波函数通过多电子系统的精确对角线化来评估。哈密​​顿量是由单电子本征态,跳跃参数和库仑积分构造而成的,这些原子是从原子NEMO 3-D模拟得出的。计算出的Ⅰ-Ⅴ特性表现出多个与实验趋势相似的显着负差分电阻(NDR)区域。但是,与共振隧穿设备不同,DQD中的水平交叉点可以忽略不计,而NDR是由于离域,轨道偏移和库仑相互作用之间的微妙相互作用而产生的。

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