Electron subband dispersions in ultra-thin silicon films from a two-band k·p theory

摘要

The electron subband structure in a thin (100) silicon film is analyzed based on a two-band k·p theory. For unprimed subbands the dependence of the nonparabolic-ity parameter on film thickness is obtained. The two-band k·p theory gives a thickness dependence of the effective masses for primed subbands. Limitations of the model are discussed. The importance of the nonparabolicity parameter dependence on the film thickness for transport is demonstrated.